Reliability degradation of ultra-thin oxynitride and Al2O3 gate dielectric films owing to heavy-ion irradiation
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چکیده
منابع مشابه
Effect of Heavy Ion irradiation and Electrical Stress on Ultra-Thin Gate Oxide SOI MOSFETs
An accelerated wear-out of ultra-thin gate oxides used in contemporary deep-submicron CMOS technologies is one of the effects observed in MOSFETs submitted to irradiation with high LET particles [1-5]. The damage introduced in the gate oxide by an impinging ion may in fact act as a seed for further degradation produced by electrons and holes injected at high fields during a subsequent electrica...
متن کاملStatistical Model for Radiation-Induced Wear-Out of Ultra-Thin Gate Oxides After Exposure to Heavy Ion Irradiation
In this work, we present an original model to explain the accelerated wear-out behavior of irradiated ultra-thin oxides. The model uses a statistical approach to the breakdown occurrences based on a nonhomogeneous Poisson process. By means of our model, we can estimate the number and the time evolution of those damaged regions produced by ion hits that generate breakdown spots during high field...
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Highly-ordered, pore-modified with amine groups, and glass-like mesoporous silicon oxynitride thin films were prepared by heat treatment of as-synthesized mesoporous silica thin films in a flowing ammonia environment at high temperatures.
متن کاملHot-Carrier Reliability of P-MOSFET with Ultra-Thin Silicon Nitride Gate Dielectric
The degradation of 100 nm effective channel length pMOS transistors with 14 A equivalent oxide thickness JVD Si3N4 gate dielectric under hot-carrier stress is studied. Interface-state generation is identified as the dominant degradation mechanism. Hot-carrier-induced gate leakage may become a new reliability concem. Hot-carrier reliability of 14 A Si3N4 transistors is compared to reliability of...
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ژورنال
عنوان ژورنال: Electronics Letters
سال: 2002
ISSN: 0013-5194
DOI: 10.1049/el:20020119